Structural and Optical Properties of Aluminum Nitride Thin Films Deposited by Pulsed DC Magnetron Sputtering. (3rd October 2013)

• Record Type: Journal Article
• Authors: Choudhary, R. K.; Mishra, P.; Biswas, A.; Bidaye, A. C.
• Other Names: Nassar E. J. Academic Editor.; Sun Y. Academic Editor.
• Is Part Of: ISRN materials science. Volume 2013(2013)
• Publication Date: 2013-10-03
• Subjects: Materials science -- Periodicals; Materials science; Periodicals; 620.11
• DOI: 10.1155/2013/759462
• Languages: English
• ISSNs: 2090-6080

Abstract

Abstract : Aluminum nitride thin films were deposited on Si (100) substrate by pulsed DC (asymmetric bipolar) reactive magnetron sputtering under variable nitrogen flow in a gas mixture of argon and nitrogen. The deposited film was characterized by grazing incidence X-ray diffraction (GIXRD), atomic force microscope (AFM), spectroscopic ellipsometry, and secondary ion mass spectroscopy (SIMS). GIXRD results have shown (100) reflection of wurtzite AlN, whereas AFM micrographs have revealed very fine grained microstructure with average roughness in the range 6–8 nm. Spectroscopic ellipsometry measurements have indicated the band gap and refractive index of the film in the range 5.0–5.48 eV and 1.58–1.84, respectively. SIMS measurement has indicated the presence of oxygen in the film.