Synthesis of ZnO sol–gel thin-films CMOS-Compatible. Issue 37 (29th June 2021)

• Record Type: Journal Article
• Authors: Ben Moussa, Nizar; Lajnef, Mohamed; Jebari, Nessrine; Villebasse, Cedric; Bayle, Fabien; Chaste, Julien; Madouri, Ali; Chtourou, Radouane; Herth, Etienne
• Is Part Of: RSC advances. Volume 11:Issue 37(2021)
• Page Start: 22723
• Page End: 22733
• Publication Date: 2021-06-29
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/d1ra02241e
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : A low-cost sol–gel spin-coating technique is used in this study for the simple synthesis of eco-friendly ZnO multilayer films deposited on (100)-oriented silicon substrates ranging from 150 to 600 nm by adjusting the spin coating rate. Abstract : Zinc oxide (ZnO) is a II–VI group semiconductor with a wide direct bandgap and is an important material for various fields of industry and high-technological applications. The effects of thickness, annealing process in N2 and air, optical properties, and morphology of ZnO thin-films are studied. A low-cost sol–gel spin-coating technique is used in this study for the simple synthesis of eco-friendly ZnO multilayer films deposited on (100)-oriented silicon substrates ranging from 150 to 600 nm by adjusting the spin coating rate. The ZnO sol–gel thin-films using precursor solutions of molarity 0.75 M exhibit an average optical transparency above 98%, with an optical band gap energy of 3.42 eV. The c -axis (002) orientation of the ZnO thin-films annealed at 400 °C were mainly influenced by the thickness of the multilayer, which is of interest for piezoelectric applications. These results demonstrate that a low-temperature method can be used to produce an eco-friendly, cost-effective ZnO sol–gel that is compatible with a complementary metal-oxide-semiconductor (CMOS) and integrated-circuits (IC).