Ferroelectric Field Effect Transistors: Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption (Adv. Funct. Mater. 1/2020). (3rd January 2020)

• Record Type: Journal Article
• Authors: Ren, Chuanlai; Zhong, Gaokuo; Xiao, Qun; Tan, Congbing; Feng, Ming; Zhong, Xiangli; An, Feng; Wang, Jinbin; Zi, Mengfei; Tang, Mingkai; Tang, Yong; Jia, Tingting; Li, Jiangyu
• Is Part Of: Advanced functional materials. Volume 30:Number 1(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2020-01-03
• Subjects: ferroelectric field effect transistors -- flexible electronics -- high temperature operation -- mica; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.202070005
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : In article number 1906131, Gaokuo Zhong, Xiangli Zhong, Jiangyu Li, and co‐workers develop an all‐inorganic flexible ferroelectric field effect transistor (FeFET) based on an epitaxial Pb(Zr0.1 Ti0.9 )O3 /ZnO heterostructure on a mica substrate, which not only operates under a small voltage and thus consumes low power, but also shows robust FeFET performance under large bending deformation, extended bending cycling cycles, and high temperature operation at 200 °C.