Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption. (4th November 2019)

• Record Type: Journal Article
• Authors: Ren, Chuanlai; Zhong, Gaokuo; Xiao, Qun; Tan, Congbing; Feng, Ming; Zhong, Xiangli; An, Feng; Wang, Jinbin; Zi, Mengfei; Tang, Mingkai; Tang, Yong; Jia, Tingting; Li, Jiangyu
• Is Part Of: Advanced functional materials. Volume 30:Number 1(2020)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-11-04
• Subjects: ferroelectric field effect transistors -- flexible electronics -- high temperature operation -- mica; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201906131
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: Flexible ferroelectric field effect transistors (FeFETs) with multiple functionalities and tunable properties are attractive for low power sensing, nonvolatile data storage, as well as emerging memristor applications such as artificial synapses, though the state‐of‐art flexible FeFETs based on organic materials possess low polarization, large coercivity, and high operating voltage, and suffer from poor thermal stability. Here, developed is an all‐inorganic flexible FeFET based on epitaxial Pb(Zr0.1 Ti0.9 )O3 /ZnO heterostructure on a mica substrate, which not only operates under a small voltage (±6 V) and thus consumes low power with an excellent on/off ratio of 10 4 as well as retention characteristics, but also shows robust FeFET performance under large bending deformation (4 mm), extended bending cycling (500 cycles), and high temperature operation at 200 °C. Importantly, the FeFET characteristics depend on temperature, but not on temperature history, critical for operation under repeated thermal loading. The excellent mechanical flexibility and functional robustness of the flexible FeFET originate from the unique van der Waals bonded layer structure of mica, facilitating a small bending radius yet modest strain. This work demonstrates the great promise of mica as a universal platform to integrate complicated functional devices for flexible electronics, especially under harsh environment. Abstract : An all‐inorganic flexible ferroelectric field effect transistor (FeFET) based on an epitaxial Pb(Zr0.1 Ti0.9 )O3 /ZnO heterostructure on a mica substrate is developed, which not only operates under a small voltage and thus consumes low power, but also shows robust FeFET performance under large bending deformation, extended bending cycling cycles, and high temperature operation at 200 °C.