Nitrogen as a Suitable Replacement for Argon within Methane‐Based Hot‐Wall Graphene Chemical Vapor Deposition. Issue 12 (18th August 2019)

• Record Type: Journal Article
• Authors: Gausden, Johannes; Siris, Rita; Stimpel-Lindner, Tanja; McEvoy, Niall; Duesberg, Georg S.; Hallam, Toby
• Is Part Of: Physica status solidi. Volume 256:Issue 12(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-08-18
• Subjects: chemical vapor deposition -- graphene -- nitrogen; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201900240
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : Of the gases frequently used during graphene chemical vapor deposition (CVD), argon plays no direct chemical role and therefore may be suitable for substitution with the cheaper alternative of nitrogen. The impact of using nitrogen as a carrier gas in methane‐based hot‐wall graphene CVD is investigated using Raman spectroscopy, X‐ray photoelectron spectroscopy, and time‐of‐flight secondary ion mass spectroscopy. No increase in the nitrogen signal is observed within graphene grown within a nitrogen atmosphere within the detection limits of the spectroscopic techniques used. Abstract : Replacement of argon with nitrogen as the buffering gas within methane‐based, hot‐wall graphene chemical vapor deposition (CVD) is investigated. Analysis with Raman spectroscopy, X‐ray photoelectron spectroscopy, and time‐of‐flight secondary ion mass spectroscopy reveals no increase of nitrogen signal, above machine minimum detection limits, when comparing graphene grown within a nitrogen atmosphere to graphene grown within an argon atmosphere.