High‐Performance n‐Channel Organic Transistors Using High‐Molecular‐Weight Electron‐Deficient Copolymers and Amine‐Tailed Self‐Assembled Monolayers. Issue 13 (12th February 2018)
- Record Type:
- Journal Article
- Title:
- High‐Performance n‐Channel Organic Transistors Using High‐Molecular‐Weight Electron‐Deficient Copolymers and Amine‐Tailed Self‐Assembled Monolayers. Issue 13 (12th February 2018)
- Main Title:
- High‐Performance n‐Channel Organic Transistors Using High‐Molecular‐Weight Electron‐Deficient Copolymers and Amine‐Tailed Self‐Assembled Monolayers
- Authors:
- Wang, Yang
Hasegawa, Tsukasa
Matsumoto, Hidetoshi
Mori, Takehiko
Michinobu, Tsuyoshi - Abstract:
- Abstract: While high‐performance p‐type semiconducting polymers are widely reported, their n‐type counterparts are still rare in terms of quantity and quality. Here, an improved Stille polymerization protocol using chlorobenzene as the solvent and palladium(0)/copper(I) as the catalyst is developed to synthesize high‐quality n‐type polymers with number‐average molecular weight up to 10 5 g mol −1 . Furthermore, by sp 2 ‐nitrogen atoms (sp 2 ‐N) substitution, three new n‐type polymers, namely, pBTTz, pPPT, and pSNT, are synthesized, and the effect of different sp 2 ‐N substitution positions on the device performances is studied for the first time. It is found that the incorporation of sp 2 ‐N into the acceptor units rather than the donor units results in superior crystalline microstructures and higher electron mobilities. Furthermore, an amine‐tailed self‐assembled monolayer (SAM) is smoothly formed on a Si/SiO2 substrate by a simple spin‐coating technique, which can facilitate the accumulation of electrons and lead to more perfect unipolar n‐type transistor performances. Therefore, a remarkably high unipolar electron mobility up to 5.35 cm 2 V −1 s −1 with a low threshold voltage (≈1 V) and high on/off current ratio of ≈10 7 is demonstrated for the pSNT‐based devices, which are among the highest values for unipolar n‐type semiconducting polymers. Abstract : High‐molecular‐weight ( M n ) n‐type semiconducting copolymers are synthesized via an improved Stille polymerizationAbstract: While high‐performance p‐type semiconducting polymers are widely reported, their n‐type counterparts are still rare in terms of quantity and quality. Here, an improved Stille polymerization protocol using chlorobenzene as the solvent and palladium(0)/copper(I) as the catalyst is developed to synthesize high‐quality n‐type polymers with number‐average molecular weight up to 10 5 g mol −1 . Furthermore, by sp 2 ‐nitrogen atoms (sp 2 ‐N) substitution, three new n‐type polymers, namely, pBTTz, pPPT, and pSNT, are synthesized, and the effect of different sp 2 ‐N substitution positions on the device performances is studied for the first time. It is found that the incorporation of sp 2 ‐N into the acceptor units rather than the donor units results in superior crystalline microstructures and higher electron mobilities. Furthermore, an amine‐tailed self‐assembled monolayer (SAM) is smoothly formed on a Si/SiO2 substrate by a simple spin‐coating technique, which can facilitate the accumulation of electrons and lead to more perfect unipolar n‐type transistor performances. Therefore, a remarkably high unipolar electron mobility up to 5.35 cm 2 V −1 s −1 with a low threshold voltage (≈1 V) and high on/off current ratio of ≈10 7 is demonstrated for the pSNT‐based devices, which are among the highest values for unipolar n‐type semiconducting polymers. Abstract : High‐molecular‐weight ( M n ) n‐type semiconducting copolymers are synthesized via an improved Stille polymerization with Pd(0)/Cu(I) cocatalysts and chlorobenzene as the solvent. Due to the synergistic effects of the high M n, rational molecular design of sp 2 ‐nitrogen substitution, and an amine‐tailed self‐assembled monolayer, unipolar n‐channel organic transistors with remarkably high electron mobilities up to 5.35 cm 2 V −1 s −1 are achieved. … (more)
- Is Part Of:
- Advanced materials. Volume 30:Issue 13(2018)
- Journal:
- Advanced materials
- Issue:
- Volume 30:Issue 13(2018)
- Issue Display:
- Volume 30, Issue 13 (2018)
- Year:
- 2018
- Volume:
- 30
- Issue:
- 13
- Issue Sort Value:
- 2018-0030-0013-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2018-02-12
- Subjects:
- high‐molecular‐weight semiconducting polymers -- n‐type transistors -- self‐assembled monolayers -- sp2‐nitrogen‐atom substitution
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1521-4095 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adma.201707164 ↗
- Languages:
- English
- ISSNs:
- 0935-9648
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.897800
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 17488.xml