Design and DFT study of nitrogen-rich donor systems for improved photovoltaic performance in dye-sensitized solar cells. (15th June 2021) - Divya, Velayudhan V.
Abstract : Donor modifications, especially through N-annulation, for enhancing the structure–performance relationship of D–π–A systems for DSSC applications. Abstract : Eighteen electron-rich nitrogen incorporated donors with a butadiene π-spacer and a cyanoacrylic acid acceptor (A) as photosensitizers (D1–π–A to D18–π–A) for dye-sensitized solar cell (DSSC) applications have been designed for improving the photovoltaic performance. The significance of the nitrogen centres for revamping the donating strength (Δ V mA ) of D–π–A is scrutinized using molecular electrostatic potential (MESP) analysis at the B3LYP/cc-pVDZ level of density functional theory (DFT). During the transformation of a donor (D) to D–π–A, a certain delocalization of electron density from D to π–A has occurred, and the change in the MESP minimum (Δ V mA ) observed at the cyano region of D–π–A is related to the donating strength of D. Optical and photovoltaic properties are analyzed at the TD/CAM-B3LYP/cc-pVDZ/SMD//B3LYP/cc-pVDZ level. In D1–π–A to D18–π–A, Δ V mA is in the range −7.0 to −19.0 kcal mol −1 and the increase in donating strength is found to be proportional to the number of planar nitrogens in the donors. D12–π–A exhibited the most negative Δ V mA (−19.0 kcal mol −1 ), indicating the highest electron-donating strength of D12, whereas the least negative Δ V mA (−7.0 kcal mol −1 ) displayed by D7–π–A is correlated to the weak donating character of D7. By increasing the electron-donating strength of D in D–π–A, a red-shift in the absorption maximum (Δ λ max ) by 162 to 294 nm is observed. Further, the open-circuit voltage (e V oc ) calculated for the D–π–A systems showed a strong linear relationship with Δ V mA . The LUMO (lowest unoccupied molecular orbital) energy of all the D–π–A systems (−1.79 to −2.79 eV) is observed above the conduction band (CB) energy of TiO2 (−4.0 eV), which ensured a desirable electron injection efficiency (Δ G inject ) for them. The analysis of the adsorption energy ( E ads ) of the D–π–A systems on the TiO2 semiconductor (D–π–A/TiO2 ) showed that D12–π–A has the highest adsorption stability. Improving the adsorption stability is better for improving e V oc and the power conversion efficiency (PCE). The maximum absorption wavelength ( λ max ) of the D–π–A/TiO2 systems ranges from 513 to 703 nm and all of them display a red-shift with respect to the bare D–π–A systems. The study suggests D12 as the most efficient photosensitizer for DSSC applications. Further, it deepens the understanding of the structure–performance relationship of D–π–A systems as photosensitizers.