Cite
HARVARD Citation
Yin, X. et al. (2021). High Internal Quantum Efficiency AlGaN Epilayer Grown by Molecular Beam Epitaxy on Si Substrate. ECS journal of solid state science and technology. p. . [Online].
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Yin, X. et al. (2021). High Internal Quantum Efficiency AlGaN Epilayer Grown by Molecular Beam Epitaxy on Si Substrate. ECS journal of solid state science and technology. p. . [Online].