Realizing room temperature double hysteresis loops in antiferroelectric NaNbO3 based ceramics. Issue 15 (1st August 2021)

• Record Type: Journal Article
• Authors: Chen, Min; Pu, Yongping; Zhang, Lei; Shi, Yu; Zhuo, Fangping; Zhang, Qianwen; Li, Run; Du, Xinyi
• Is Part Of: Ceramics international. Volume 47:Issue 15(2021)
• Page Start: 21303
• Page End: 21309
• Publication Date: 2021-08-01
• Subjects: NaNbO3 -- Antiferroelectrics -- Double P–E loops -- Pulse discharge; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2021.04.137
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Lead-free antiferroelectric (AFE) materials have seen a surge of research activity in environmentally friendly energy storage technologies. Recently, considerable work has been done to improve the stability of AFE in NaNbO3 (NN) ceramics, but it remains a grand challenge to obtain typical AFE characteristic double P - E loops in NN ceramics at ambient conditions. In a preliminary estimate of tolerance factor versus average electronegativity difference, we reported the stable AFE phase in 0.95NaNbO3 -0.05BiMg2/3 Ta1/3 O3 sample. The orthorhombic Q to P phase transition was verified by XRD and TEM. Then, the remarkable double P - E loops were obtained in 0.95NaNbO3 -0.05BiMg2/3 Ta1/3 O3 ceramics. Furthermore, a phenomenological model was proposed to explain the P - E relationships and our results. Compared with other reported compounds, the T P-R decreased more obviously from 350 °C to 200 °C. Superior temperature stability (variations of maximum current, current density, and power density within 15% over 30–140 °C) and field induced phase transition were also confirmed by the pulse charge testing. Our work develops a new road for achieving room-temperature double P - E loops in NN ceramics by BiM1 M2 O3 (M1 might be Mg, Zn, etc; M2 might be Nb, Ta, etc) additives.