P-GaN-substrate sprouted giant pure negative electrocaloric effect in Mn-doped Pb(Zr0.3Ti0.7)O3 thin film with a super-broad operational temperature range. (August 2021)

• Record Type: Journal Article
• Authors: Peng, Biaolin; Wang, Tingting; Liu, Laijun; Chen, Xue; Li, Jingfeng; Zhang, Qi; Yang, Rusen; Sun, Wenhong; Wang, Zhong Lin
• Is Part Of: Nano energy. Volume 86(2021)
• Publication Date: 2021-08
• Subjects: P-GaN-substrate -- Negative electrocaloric effect -- Thin film -- Structural phase transition -- PZT-Mn; Nanoscience -- Periodicals; Nanotechnology -- Periodicals; Nanostructured materials -- Periodicals; Power resources -- Technological innovations -- Periodicals; Nanoscience; Nanostructured materials; Nanotechnology; Power resources -- Technological innovations; Periodicals; 621.042
• DOI: 10.1016/j.nanoen.2021.106059
• Languages: English
• ISSNs: 2211-2855

Abstract

Abstract: Ferroelectric thin films simultaneously possessing large positive and negative electrocaloric ( EC ) effects are attractive to the solid-state temperature-controlled devices which can be used in many fields, such as modern electronics, communications, medical and military, etc. Here, it is demonstrated that the giant positive EC effect (△ T max ~ 44.5 K and △ S max ~ - 42.8 JK −1 kg −1 at ~ 313 K) of the Mn-doped Pb(Zr0.3 Ti0.7 )O3 (PZT-Mn) thin film deposited by a sol-gel method on the Pt/TiOx/SiO2 /Si can be tailored into a pure negative EC effect (△ T max ~ - 23.5 K and △ S max ~ 16.3 JK −1 kg −1 ) with a recorded super-broad operational temperature range (~ 150 K) by directly depositing on the p-GaN-substrate that has a high carrier concentration (n = 4 × 10 17 ). Under the sprouting of the p-GaN-substrate, an electric-field induced structural phase transition (nano-scaled tetragonal phase to rhombohedral phase) plays a key role in obtaining the recorded pure negative EC effect. It is concluded that direct deposition of ferroelectric thin film on the p-GaN-substrate can be used as a universal-simple-effective strategy to generate a pure negative EC effect in a broad operational temperature range (≥ 100 K). Graphical Abstract: ga1 Highlights: A giant negative EC effect was obtained in Mn-doped Pb(Zr0.3 Ti0.7 )O3 thin film. P-GaN-substrates prouted the structural phase transition between T and R . P-GaN-substrate with high carrier concentration benefits the perovskite.