P‐19: Student Poster: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistors for Gate‐Driver Circuit Fabricated on a Flexible Substrate. Issue 1 (28th June 2021)

• Record Type: Journal Article
• Authors: Shi, Runxiao; Wang, Sisi; Wang, Yuqi; Zhou, Zhichao; Xia, Zhihe; Lu, Lei; Wong, Man
• Is Part Of: Digest of technical papers. Volume 52:Issue 1(2021)
• Page Start: 1124
• Page End: 1127
• Publication Date: 2021-06-28
• Subjects: Thin-film transistor -- Indium-gallium-zinc oxide -- Fluorination -- Circuit -- Flexible electronics -- Gate Driver; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.14891
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : The effects of fluorination on amorphous indium‐gallium‐zinc oxide thin‐film transistors fabricated on polyimide (PI) at a maximal temperature of 300 °C were investigated. An excimer laser was used to lift‐off the PI from a glass‐based carrier substrate. The resulting TFTs exhibit more positive threshold voltage, steeper subthreshold swing, reduced apparent short‐channel effects, and tighter distribution of device parameters. Various test circuit blocks and a 4‐stage 15T1C gate driver were constructed to demonstrate the beneficial effects of fluorination on circuit applications.