P‐11: Self‐Heating Induced Degradation in a Metal‐Oxide Thin‐Film Transistor on a Flexible Substrate and Its Mitigation. Issue 1 (28th June 2021)

• Record Type: Journal Article
• Authors: Xia, Zhihe; Shi, Runxiao; Lu, Lei; Kwok, Hoi-Sing; Wong, Man
• Is Part Of: Digest of technical papers. Volume 52:Issue 1(2021)
• Page Start: 1092
• Page End: 1095
• Publication Date: 2021-06-28
• Subjects: Self-heating -- thin-film transistor -- TFT -- flexible electronics -- indium-gallium-zinc oxide -- IGZO -- fluorination; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.14883
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Self‐heating effects (SHE) in a metal‐oxide thin‐film transistor (TFT) built on a polyimide substrate are characterized and their correlation to the effects on the TFT subjected to positive‐bias thermal stress is verified. Techniques of mitigating SHE are proposed, including breaking up a wide channel into parallel tracks of narrower channels or fluorination of the channel.