2–4 GHz wideband power amplifier with ultra‐flat gain and high PAE. Issue 5 (1st February 2013)

• Record Type: Journal Article
• Authors: Ding, X.; He, S.; You, F.; Xie, S.; Hu, Z.
• Is Part Of: Electronics letters. Volume 49:Issue 5(2013)
• Page Start: 326
• Page End: 327
• Publication Date: 2013-02-01
• Subjects: frequency -- gain -- power; channel allocation -- code division multiple access -- high electron mobility transistors -- power amplifiers -- printed circuits -- wideband amplifiers; wideband power amplifier -- ultra‐flat gain -- high PAE -- WPA -- HEMT -- optimum impedances -- gain flatness -- compact PCB -- continuous waves -- input power level -- power gain -- power‐added efficiency -- WCDMA signal -- adjacent channel leakage ratio -- ACLR -- digital predistortion -- DPD -- drain efficiency -- frequency 2 GHz to 4 GHz -- power 10 W -- gain 12.3 dB to 14.1 dB; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2012.4135
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Demonstrated is a 2–4 GHz wideband power amplifier (WPA) using Cree 10 W GaN HEMT CGH40010. Also a novel process to find the optimum impedances is presented, with which the gain flatness can be taken into account. A compact PCB has been fabricated and tested with continuous waves at low (20 dBm) and high (28 dBm) input power level. From the measured results, at low power level, the gain is 13.1–14.1 dB across 2.0–3.9 GHz and 12.3–14.1 dB across 2.0–4.0 GHz. For large signals, power gain is 11.1–12.6 dB with power‐added efficiency (PAE) 36.5–53.4% while output power is around 40 dBm. Gain flatness keeps less than 1 dB beyond 95% of the band. For a 5 MHz WCDMA signal, the adjacent channel leakage ratio of the WPA with digital predistortion reaches − 45.3 dBc with an average drain efficiency of 46.7%.