Carrier relaxation time modelling of monolayer black phosphorene. (1st October 2017)

• Record Type: Journal Article
• Authors: Pourasl, Ali H.; Ahmadi, Mohammad T.; Ismail, Razali
• Is Part Of: Micro & nano letters. Volume 12:Number 10(2017)
• Page Start: 758
• Page End: 762
• Publication Date: 2017-10-01
• Subjects: carrier relaxation time -- phosphorus -- elemental semiconductors -- monolayers -- carrier mobility -- Fermi level; carrier relaxation time -- monolayer black phosphorene -- bandgap -- electronic devices -- carrier mobility -- energy dispersion relation -- conduction theory -- carrier velocity -- Fermi energy -- P; Nanotechnology -- Periodicals; Nanostructures -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1049/mnl.2017.0242
• Languages: English
• ISSNs: 1750-0443

Abstract

Abstract : Phosphorene as an innovative structure that can be exfoliated similarly to the graphene with a direct, inherent and suitable bandgap presents exceptional prospects for future generations of electronic devices. Phosphorene possess high carrier mobility, therefore, in this work its carrier statistics in the form of monolayer phosphorene in the non‐degenerate limit is analytically modelled and the mobility relation with carrier relaxation time is investigated. Energy dispersion relation is used to develop and calculate the required parameters for carrier relaxation time model which is an important parameter in conduction theory. On the other hand, the dependency of carrier velocity and mobility to voltage, normalised Fermi energy and temperature are modelled. Finally, the carrier relaxation time as a function of carrier mobility is modelled and its dependency towards temperature and normalised Fermi energy is discussed. It is shown that the relaxation time is strongly dependent on the carrier mobility which increases by increasing the mobility.