High detectivity and responsivity in black phosphorus/SnS2 heterostructure with broken-gap energy band alignment. (4th June 2021)

• Record Type: Journal Article
• Authors: Lei, Ting; Lv, Weiming; Lv, Wenxing; Zhang, Like; Cui, Boyao; Tu, Huayao; Zhang, Xuan; Shi, Wenhua; Zeng, Zhongming
• Is Part Of: Japanese journal of applied physics. Volume 60:Number 6(2021)
• Publication Date: 2021-06-04
• Subjects: black phosphorus -- optoelectronics -- broken-gap heterostructure -- highly sensitive; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac0408
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: van der Waals heterostructures (vdWHs) based on atomically two-dimensional materials have gained extensive attention due to their great potential in the new era of next-generation optoelectronics. Most reported photodetectors exhibit type-II band alignment and their photodetection performance is often limited by either low photoresponsivity or high dark current. However, type-Ⅲ vdWHs with broken gaps are still very rare, which limits the development and application of two-dimensional (2D) materials in the fields of photodetector. Here, we demonstrate a highly sensitive black phosphorus (BP)/SnS2 photodetector with type-III (broken-gap) band alignment. The dark current of BP/SnS2 vdWH is greatly suppressed by high barrier at the junction and high photoresponsivity generated from high tunneling current when illuminated. The BP/SnS2 vdWH exhibits both ultrahigh photodetectivity of 6.72 × 10 12 Jones and photoresponsivity of 295.3 A W −1 under the illumination of 365 nm light (0.53 mW cm −2 ). Our results provide an avenue for developing high performance optoelectronics and better understanding the underlying physics in the broken-band alignment systems.