Carrier transport mechanism of diamond p+–n junction at low temperature using Schottky–pn junction structure. (18th February 2021)

• Record Type: Journal Article
• Authors: Karasawa, Ayumu; Makino, Toshiharu; Traore, Aboulaye; Kato, Hiromitsu; Ogura, Masahiko; Kato, Yukako; Takeuchi, Daisuke; Yamasaki, Satoshi; Sakurai, Takeaki
• Is Part Of: Japanese journal of applied physics. Volume 60:Number 3(2021)
• Publication Date: 2021-02-18
• Subjects: carrier transport -- Schottky-pn diodes -- diamond devices -- heavily doped diamond -- metallic conduction -- Fowler–Nordheim; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/abe33f
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We elucidate the carrier transport mechanism from the p + -layer (metallic-conduction) to the n-layer (band-conduction) in a diamond p + –n junction, which is the basic structure of diamond devices. We fabricate Schottky–pn diodes containing p + –n junctions and analyze the temperature dependence of electrical properties in the forward bias region. At temperatures higher than the cryogenic region, free holes transport from the p + -layer to the n-layer. In the cryogenic region, which is insufficient to excite holes to the valence band, the direct transport of holes from the effective carrier conduction level in the p + -layer to the n-layer by tunneling becomes dominant.