Tightly-bound trion and bandgap engineering via γ-ray irradiation in the monolayer transition metal dichalcogenide WSe2. (7th May 2021)

• Record Type: Journal Article
• Authors: Wu, Xiongli; Zheng, Xuejun; Zhang, Guangbiao; Chen, Xinnan; Ding, Jianwen
• Is Part Of: Nanotechnology. Volume 32:Number 30(2021)
• Publication Date: 2021-05-07
• Subjects: transition metal dichalcogenide -- tungsten diselenide -- excitons -- trion -- γ-ray irradiation -- monolayer; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/abf879
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: After γ -ray irradiation treatment, a monolayer tungsten diselenide could be transitioned into an n-doped semiconductor due to the anion vacancies created by the radiation. Transmission electron microscope studies showed clear chemical modulation with atomically sharp interface. Change in the lattice vibrational modes induced by passivation of oxygen is captured by Raman spectroscopy. The frequency shifts in both in-plane and out-of-plane modes are dependent linearly on the oxidation content. We observe a negative trion, which is a neutral exciton bound with an electron, in the photoluminescence spectra. The binding energy of this trion is estimated to be ∼90 meV, making it a tightly bound exciton. The first-principles calculation suggests that an increase in the anion vacancy population is generally accompanied by a transition from a direct gap material to an indirect one. This opens up a new venue to engineer the electronic properties of transition metal dichalcogenides by using irradiation.