Printable ReRAM devices based on the non‐stoichiometric junction CuS/Cu2−xS. Issue 22 (1st October 2016)

• Record Type: Journal Article
• Authors: Congiu, M.; Albano, L.G.S.; Nunes‐Neto, O.; Graeff, C.F.O.
• Is Part Of: Electronics letters. Volume 52:Issue 22(2016)
• Page Start: 1871
• Page End: 1873
• Publication Date: 2016-10-01
• Subjects: copper compounds -- stoichiometry -- resistive RAM; printable ReRAM device -- nonstoichiometric junction -- redox resistive switching memory -- copper sulphide -- stacked nanocrystal -- low‐temperature drop‐casting technique -- memresistive characteristic -- resistance states -- voltage pulse -- polynomial model -- space‐charge‐limited current -- ionic diffusion -- CuS -- Cu2−xS; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2016.2901
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Hereby a novel thin film‐based configuration of redox resistive switching memory (ReRAM) based on cheap and abundant copper sulphide (CuS) is reported. The devices working mechanism is based on the junction of two layers of CuS stacked nanocrystal with different stoichiometry (CuS and Cu2− x S). CuS thin films were deposited using a fast, easy and low‐temperature drop‐casting technique. The devices shown memresistive characteristics, with well‐defined ON and OFF resistance states, inducible by voltage pulses. A polynomial model has been proposed to characterise the devices considering both space‐charge‐limited current and ionic diffusion.