A Novel approach to fabricate self‐aligned graphene transistor. Issue 23 (1st November 2017)

• Record Type: Journal Article
• Authors: Zeng, Rongzhou; Li, Ping; Li, Junhong; Liao, Yongbo; Zhang, Qingwei; Xie, Xiaodong
• Is Part Of: Electronics letters. Volume 53:Issue 23(2017)
• Page Start: 1536
• Page End: 1537
• Publication Date: 2017-11-01
• Subjects: graphene devices -- field effect transistors -- contact resistance; gate self‐aligned graphene field effect transistor -- GSA‐GFET -- stacked source‐drain electrodes -- triple‐layer metal -- access resistance -- lateral recessing -- non‐SA‐GFET -- gate length -- gate width -- contact resistance -- innovated simple fabrication process; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2017.2702
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : An innovated simple fabrication process is adopted to fabricate a novel gate self‐aligned (GSA) graphene field effect transistor (GFET). First, stacked source/drain electrodes with triple‐layer metal are formed. Then, after slightly etching of the second metal layer, laterally recessed profiles are formed, which leads to the self‐aligned (SA) gate. A noticeable feature of the GSA‐GFET is that the access resistance is not changed with the level of the lateral recessing, which leads to a very small access resistance. Compared with the non‐SA‐GFET with same gate length and width, the contact resistance of the GSA‐GFET is reduced by 68%, the peak gm is 3.6 times improved, the on/off ratio is increased from 1.8 to 3.2.