Monolithically integrated wavelength‐multiplexed DFB laser array with laterally coupled quarter‐wave phase‐shift gratings defined by interference lithography. Issue 18 (1st August 2014)

• Record Type: Journal Article
• Authors: Li, Jingsi; Cheng, Julian
• Is Part Of: Electronics letters. Volume 50:Issue 18(2014)
• Page Start: 1303
• Page End: 1305
• Publication Date: 2014-08-01
• Subjects: distributed feedback lasers -- semiconductor laser arrays -- optical retarders -- diffraction gratings -- photolithography -- light interference; monolithically integrated wavelength‐multiplexing -- DFB laser array -- laterally coupled quarter‐wave phase‐shift gratings -- interference lithography -- side mode suppression ratio -- SMSR -- wavelength spacing -- bias current -- power 11.4 mW to 14.1 mW; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.2118
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The first monolithically integrated laterally coupled, multi‐wavelength distributed feedback (DFB) laser array using first‐order sidewall sampled gratings with equivalent quarter‐wave phase shifts defined by interference lithography is experimentally demonstrated. The elements of the monolithic DFB laser array lase strongly monomode, with an average side mode suppression ratio of ∼37.3 dB and with a uniform wavelength spacing of ∼7.3 nm. The output power under 100 mA bias current ranges from 11.4 to 14.1 mW. The proposed method offers a practical and low‐cost method for the fabrication of multi‐wavelength monolithic DFB laser arrays without regrowth or e‐beam lithography.