HAD fabricated on UTB AlGaN/GaN heterostructure for high‐sensitivity zero‐bias microwave detection. Issue 24 (1st November 2019)

• Record Type: Journal Article
• Authors: Yun, Yu; Xiong, Wei; Shi, Yu; Chen, Kuangli; Zhou, Qi
• Is Part Of: Electronics letters. Volume 55:Issue 24(2019)
• Page Start: 1303
• Page End: 1305
• Publication Date: 2019-11-01
• Subjects: gallium compounds -- microwave detectors -- semiconductor heterojunctions -- wide band gap semiconductors -- III‐V semiconductors -- aluminium compounds -- microwave diodes; high‐sensitivity zero‐bias microwave detection -- precise modulation -- turn‐on voltage -- high‐curvature coefficient -- fabricated UTB‐HAD -- first‐order voltage sensitivity -- precise sensitivity modulation -- zero‐bias microwave detection applications -- barrier thickness optimization -- aluminium gallium nitride‐gallium nitride hybrid‐anode diode -- TCAD simulation -- voltage 0.0 V -- size 5.0 nm -- AlGaN -- AlGaN‐GaN -- GaN; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2019.2548
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A novel technology based on aluminium gallium nitride (AlGaN)/GaN hybrid‐anode diode (HAD) for precise modulation of turn‐on voltage is proposed and experimentally demonstrated. By delicately tailoring the as‐grown barrier thickness, the turn‐on voltage of the HAD and yet the non‐linearity at zero bias (i.e. 0 V) for efficient microwave detection can be flexibly modulated. An AlGaN/GaN ultra‐thin‐barrier HAD (UTB‐HAD) was designed and fabricated for zero‐bias microwave detection. The AlGaN‐barrier thickness was optimised to be 5 nm by TCAD simulation, which yields a strong non‐linearity at zero bias featuring a high‐curvature coefficient ( γ ) of 27 V −1 in the fabricated UTB‐HAD. The first‐order voltage sensitivity β V is projected to be as high as 2.7 mV/μW. The proposed approach of precise sensitivity modulation is of great interests for high‐efficient zero‐bias microwave detection applications.