Red‐emitting distributed‐feedback ridge‐waveguide laser based on high‐order surface grating. Issue 9 (1st May 2018)

• Record Type: Journal Article
• Authors: Fricke, J.; Brox, O.; Wenzel, H.; Matalla, M.; Ressel, P.; Knigge, A.
• Is Part Of: Electronics letters. Volume 54:Issue 9(2018)
• Page Start: 582
• Page End: 583
• Publication Date: 2018-05-01
• Subjects: gallium arsenide -- III‐V semiconductors -- distributed feedback lasers -- ridge waveguides -- waveguide lasers -- laser stability -- gallium compounds -- aluminium compounds -- indium compounds -- Bragg gratings -- etching -- quantum well lasers -- laser modes -- optical fabrication; injection current -- high‐order surface grating -- wavelength stabilisation -- Bragg order surface gratings -- grating period -- red‐emitting distributed‐feedback ridge‐waveguide lasers -- p‐GaAs‐AlGaAs‐AlGaInP layer structure -- dry‐etching -- optical properties -- electrical properties -- side mode suppression ratio -- current 180.0 mA -- current 150.0 mA -- size 1.5 mm -- power 50.0 mW; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2018.0291
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Distributed‐feedback ridge‐waveguide lasers emitting around 670 nm have been fabricated and experimentally characterised. Wavelength stabilisation is provided by 40th Bragg order surface gratings dry‐etched into the p‐GaAs–AlGaAs–AlGaInP layer structure. The large grating period of 4.2 µm allows the injection of the current between the grooves of the grating without sacrificing the electrical and optical properties noticeably. The 1.5 mm long devices achieve an output power of 50 mW at an injection current of 180 mA. The side mode suppression ratio is 50 dB at 150 mA.