Al:ZnO top electrodes deposited with various oxygen pressures for ferroelectric (Pb, La)(Zr, Ti)O3 capacitors. Issue 3 (1st February 2016)

• Record Type: Journal Article
• Authors: Takada, Y.; Okamoto, N.; Saito, T.; Kondo, K.; Yoshimura, T.; Fujimura, N.; Higuchi, K.; Kitajima, A.
• Is Part Of: Electronics letters. Volume 52:Issue 3(2016)
• Page Start: 230
• Page End: 232
• Publication Date: 2016-02-01
• Subjects: ferroelectric capacitors -- annealing -- electrochemical electrodes -- pulsed laser deposition -- surface morphology -- scanning electron microscopy -- wide band gap semiconductors -- aluminium -- zinc compounds -- lead compounds -- lanthanum compounds -- zirconium compounds -- titanium compounds; electrodes deposited -- oxygen pressures -- ferroelectric capacitors -- chemical solution deposition -- pulsed laser deposition -- PLD -- AZO layer -- surface morphology -- SEM images -- polarisation–voltage hysteresis loop -- remnant polarisation -- coercive voltage -- hydrogen degradation resistance -- pressure 10 Pa -- pressure 0.5 Pa to 2.0 Pa -- temperature 200 degC -- Al:ZnO -- (PbLa)(ZrTi)O3; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.3539
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Ferroelectric (Pb, La)(Zr, Ti)O3 capacitors were fabricated using chemical solution deposition with Al:ZnO (AZO) top electrodes that were deposited using pulsed laser deposition (PLD), where the oxygen pressure was varied systematically. The oxygen pressure during deposition of the AZO layer affected the surface morphology of the AZO top electrodes, as well as the ferroelectric properties of the capacitors. As the oxygen pressure increased, the AZO grains gradually appeared clearer in the SEM images, indicating less dense stacking, and the polarisation–voltage hysteresis loops expanded horizontally. The largest values of remnant polarisation and coercive voltage were obtained at 10 Pa. Appropriate ferroelectric properties were obtained for oxygen pressures in the range of 0.5–2.0 Pa. The hydrogen degradation resistance during annealing in 3% H2 200°C and 1 Torr was independent of oxygen pressure during PLD.