Improved LDMOS‐SCR for high‐voltage electrostatic discharge (ESD) protection applications. Issue 13 (1st June 2020)

• Record Type: Journal Article
• Authors: Song, Wenqiang; Hou, Fei; Du, Feibo; Liu, Jizhi; Liu, Zhiwei; Liou, Juin J.
• Is Part Of: Electronics letters. Volume 56:Issue 13(2020)
• Page Start: 680
• Page End: 682
• Publication Date: 2020-06-01
• Subjects: electrostatic discharge -- thyristors -- MIS devices -- p‐i‐n diodes; improved LDMOS‐SCR -- high‐voltage electrostatic discharge protection applications -- ESD current discharges -- high holding voltage -- high failure current -- HBM ESD stress -- improved lateral double‐diffused MOS silicon‐controlled rectifier -- surface gated PIN diode path -- BCD process -- size 0.18 mum -- voltage 5.0 V -- voltage 24.0 V -- current 10.04 A -- voltage 15.0 kV; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2020.0748
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : An improved lateral double‐diffused MOS silicon‐controlled rectifier (ILDMOS‐SCR) for high‐voltage electrostatic discharge (ESD) protection applications has been proposed and verified in a 0.18 µm 5 V/24 V BCD process. The proposed improved lateral double‐diffused MOS silicon‐controlled rectifier (LDMOS‐SCR) is constructed by adding a gated P‐type/intrinsic/N‐type (PIN) diode into a conventional LDMOS‐SCR. With part of the ESD current discharges from the surface gated PIN diode path, the proposed ILDMOS‐SCR achieves a high holding voltage of 30 V as well as a high failure current of 10.04 A, which is evaluated to pass 15 KV Human Body Model (HBM) ESD stress.