Adjustably transconductance enhanced bulk‐driven OTA with the CMOS technologies scaling. Issue 5 (1st March 2018)

• Record Type: Journal Article
• Authors: Wang, Yongqing; Zhao, Xiao; Zhang, Qisheng; Lv, Xiaolong
• Is Part Of: Electronics letters. Volume 54:Issue 5(2018)
• Page Start: 276
• Page End: 278
• Publication Date: 2018-03-01
• Subjects: CMOS analogue integrated circuits -- operational amplifiers; operational transconductance amplifier -- weak inversion region -- current‐shunt auxiliary amplifier -- effective transconductance -- CMOS technologies -- adjustable transconductance enhancement factor -- enhanced stability performance -- positive feedback source degeneration technique -- adjustably transconductance enhanced bulk‐driven OTA -- size 180.0 nm; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2017.4435
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : An adjustably transconductance enhanced bulk‐driven operational transconductance amplifier (OTA) working at weak inversion region is presented. Based on the traditional positive feedback source degeneration technique, a proposed current‐shunt auxiliary amplifier is employed here to modulate the gate of input differential pairs, achieving a further improvement of the effective transconductance with the CMOS technologies scaling. In addition, an adjustable transconductance enhancement factor is obtained, leading to an enhanced stability performance. Both conventional and proposed bulk‐driven OTAs are designed and simulated on CSMC 180 nm process. The simulated results demonstrate that the unity gain‐bandwidth of the proposed bulk‐driven OTA is improved by 120% compared to that of the conventional counterpart with a little neglected increased power consumption.