19.5 μW ultra‐low‐power 13.56 MHz RFID tag based on transparent zinc‐oxide thin‐film transistors. Issue 5 (10th July 2020)

• Record Type: Journal Article
• Authors: Ma, Xiaoyu; Han, Yan; Han, Leixiao; Ye, Zhi
• Is Part Of: IET circuits, devices & systems. Volume 14:Issue 5(2020)
• Page Start: 674
• Page End: 679
• Publication Date: 2020-07-10
• Subjects: II-VI semiconductors -- wide band gap semiconductors -- zinc compounds -- low-power electronics -- radiofrequency identification -- thin film transistors; transparent zinc-oxide thin-film transistors -- ZnO-thin-film transistors fabrication -- near-zero threshold voltage devices -- deuterium implantation method -- transparent radio-frequency identification tag chip -- ISO-14443 type-A -- RFID tag -- ultralow-power dissipation -- ZnO-TFT technology -- n-type ZnO TFT -- frequency 13.56 MHz -- voltage 0.01 V to 5.0 V -- ZnO; Electronic circuits -- Periodicals; Electronic systems -- Periodicals; 621.381505
• DOI: 10.1049/iet-cds.2019.0406
• Languages: English
• ISSNs: 1751-858X

Abstract

Abstract : A novel systematic technological process for ZnO‐thin‐film transistors (TFTs) fabrication was developed which turned out to achieve near‐zero threshold voltage devices with good performance and stability. A deuterium implantation method was realised as well to fabricate depletion n‐type ZnO TFTs. The inverters based on enhancement/depletion ZnO TFTs reached nearly full swing (0.01–5 V at 5 V V DD ) and pretty large noise margin ( V NML = 1.01 and V NMH = 3.61 V). Moreover, a transparent radio‐frequency identification (RFID) tag chip based on ZnO TFTs was developed. This tag with an anti‐collision algorithm for ISO‐14443 type‐A was first realised under 5 µm ZnO‐TFT technology. The proposed RFID tag exhibits ultra‐low‐power dissipation of <19.5 µW at 3 V V DD and a reasonable chip area of 4.7 mm 2 .