260‐GHz waveguide module containing an integrated InP HBT amplifier chip. Issue 13 (1st June 2020)

• Record Type: Journal Article
• Authors: Yi, C.; Cho, J.; Shin, J.; Kim, M.
• Is Part Of: Electronics letters. Volume 56:Issue 13(2020)
• Page Start: 665
• Page End: 667
• Publication Date: 2020-06-01
• Subjects: aluminium compounds -- gallium compounds -- power measurement -- millimetre wave power amplifiers -- III‐V semiconductors -- high electron mobility transistors -- wide band gap semiconductors -- millimetre wave field effect transistors; power‐added efficiency -- two‐tone power measurement -- power performance -- channel design -- high‐efficiency millimeter‐wave power amplifiers -- high‐speed graded channel AlGaN‐GaN HEMT -- high electron mobility transistors -- size 60.0 nm -- voltage 10.0 V -- frequency 30.0 GHz -- voltage 14.0 V -- efficiency 75 percent -- efficiency 65 percent -- AlGaN‐GaN; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2020.0732
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A terahertz integrated amplifier circuit packaged inside a WR‐3.4 waveguide is presented. The circuit, fabricated using 250‐nm InP technology, contains three amplifier chains each connected to its own input and output waveguide transition pairs. The size of the transition is minimised for the chip to properly fit inside the standard waveguide. The assembled waveguide module shows the peak amplifier gain of 13 dB and 3‐dB bandwidth of 32 GHz as its gain is 6.2 dB less than that of an on‐wafer amplifier measured using RF probes. The maximum measured output power from the module is 6.5 dBm at 260 GHz compared to 1.4 dBm from single on‐wafer amplifier chain.