Multilayer, low‐parasitic, interconnection scheme for advanced submillimetre‐wave GaN circuits. Issue 4 (1st February 2014)

• Record Type: Journal Article
• Authors: Margomenos, A.; Shinohara, K.; Regan, D.C.; Corrion, A.L.; Brown, D.F.; Tang, Y.; Butler, C.; Schmitz, A.; Robinson, J.F.; Kim, S.; McGuire, C.; Micovic, M.
• Is Part Of: Electronics letters. Volume 50:Issue 4(2014)
• Page Start: 302
• Page End: 303
• Publication Date: 2014-02-01
• Subjects: capacitance -- gallium compounds -- gold -- high electron mobility transistors -- III‐V semiconductors -- integrated circuit interconnections -- organic compounds -- submillimetre wave integrated circuits -- submillimetre wave transistors -- wide band gap semiconductors; multilayer interconnection scheme -- low‐parasitic interconnection scheme -- advanced submillimetre‐wave GaN circuits -- highly scaled GaN high electron mobility transistors -- HEMT -- benzocy‐ clobutene dielectric -- gate parasitic capacitances -- frequency 140 GHz to 220 GHz -- GaN -- Au; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.3564
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A multilayer, low‐parasitic interconnection scheme for highly scaled GaN high electron mobility transistors is reported. The fabrication process offers three Au interconnects embedded in benzocyclobutene (BCB) dielectric, with an integrated air‐box in the active area in order to minimise the gate parasitic capacitances. With the addition of the air‐box, it is demonstrated that the performance of the BCB encapsulated device is similar to that of a non‐encapsulated device. Furthermore, by utilising the multilayer interconnection scheme a low‐loss (0.75 dB) 3 dB tandem coupler operating from 140 to 220 GHz is demonstrated.