Narrow ridge GaSb‐based cascade diode lasers fabricated by methane–hydrogen reactive ion etching. Issue 1 (1st January 2017)

• Record Type: Journal Article
• Authors: Wang, M.; Hosoda, T.; Shterengas, L.; Kipshidze, G.; Hwang, D.J.; Belenky, G.
• Is Part Of: Electronics letters. Volume 53:Issue 1(2017)
• Page Start: 40
• Page End: 42
• Publication Date: 2017-01-01
• Subjects: gallium compounds -- III‐V semiconductors -- quantum cascade lasers -- optical fabrication -- sputter etching -- laser beams -- rapid thermal annealing -- gallium arsenide -- aluminium compounds -- arsenic compounds -- current density; narrow ridge GaSb‐based cascade diode lasers -- laser fabrication -- methane‐hydrogen reactive ion etching -- type‐I quantum wells cascade diode lasers -- nearly diffraction limited output beam -- dry etching plasma process -- rapid thermal annealing -- conductivity -- annealed two‐step narrow ridge lasers -- threshold current density -- operating voltage -- slope efficiency -- wide ridge devices -- GaSb‐AlGaAsSb; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2016.3394
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : GaSb‐based type‐I quantum wells cascade diode lasers with nearly diffraction limited output beam were fabricated using methane–hydrogen dry etching plasma process. Rapid thermal annealing was shown to be a necessary step to reverse the effect of hydrogen plasma on conductivity of AlGaAsSb cladding alloy. Annealed two‐step narrow ridge lasers confined both optical field and current in lateral direction and demonstrated operating voltage, threshold current density and slope efficiency comparable to those of reference wide ridge devices.