High‐temperature electric contacts for AlGaInP/GaInP photon‐enhanced thermionic emission cathodes. Issue 14 (1st July 2017)

• Record Type: Journal Article
• Authors: Girolami, M.; Bellucci, A.; Calvani, P.; Dimroth, F.; Trucchi, D.M.
• Is Part Of: Electronics letters. Volume 53:Issue 14(2017)
• Page Start: 945
• Page End: 947
• Publication Date: 2017-07-01
• Subjects: thermionic emission -- electrical contacts -- thermionic cathodes -- aluminium compounds -- gallium compounds -- III‐V semiconductors; high‐temperature electric contacts -- photon‐enhanced thermionic emission cathodes -- transfer length method measurements -- film adhesion tests -- mechanical robustness -- temperature 25 degC to 350 degC -- AlGaInP−GaInP; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2017.0755
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Three metals (Ag, Au, and Ti) and a carbide (WC) were studied to verify their suitability to act as high‐temperature electric contacts for photon‐enhanced thermionic emission cathodes based on an AlGaInP/GaInP heterostructure. Transfer length method measurements, performed in the temperature range 25–350°C, showed that the lowest specific contact resistivity values were found for Au (4.0 × 10 −4 Ω cm −2 @350°C) and Ti (1.2 × 10 −3 Ω cm −2 @350°C). A further selection was made on the basis of film adhesion tests performed after the thermal cycles, in which Ti demonstrated an excellent mechanical robustness.