Cite
HARVARD Citation
Yang, Z. et al. (2017). 1200 V FS‐IGBT with electric field modulation layer to improve trade‐off between avalanche ruggedness and on‐state voltage drop. Electronics letters. 53 (2), pp. 100-102. [Online].
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Yang, Z. et al. (2017). 1200 V FS‐IGBT with electric field modulation layer to improve trade‐off between avalanche ruggedness and on‐state voltage drop. Electronics letters. 53 (2), pp. 100-102. [Online].