Room temperature operated diffraction limited λ ≃ 3 µm diode lasers with 37 mW of continuous‐wave output power. Issue 10 (1st May 2013)

• Record Type: Journal Article
• Authors: Hosoda, T.; Liang, R.; Kipshidze, G.; Shterengas, L.; Belenky, G.
• Is Part Of: Electronics letters. Volume 49:Issue 10(2013)
• Page Start: 667
• Page End: 669
• Publication Date: 2013-05-01
• Subjects: etching -- gallium compounds -- III‐V semiconductors -- optical losses -- quantum well lasers; diffraction limited diode lasers -- continuous wave output power -- quantum well diode lasers -- dry etching -- etching profile -- optical loss -- ridge lasers -- slope efficiency -- temperature 293 K to 298 K -- wavelength 3 mum -- power 37 mW -- size 5.5 mum -- temperature 17 degC -- GaSb; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.0804
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Single spatial mode GaSb‐based type‐I quantum well diode lasers operating near 3 µm at room temperature were designed and fabricated by chlorine‐free dry etching technique. The etching profile was optimised to minimise the optical loss. The 5.5 µm‐wide ridge lasers demonstrated the same slope efficiency as that of 100 µm‐wide multimode devices and generated 37 mW of continuous‐wave output power at 17°C.