Fundamental transverse mode operation of a type‐II vertical‐external‐cavity surface‐emitting laser at 1.2 µm. Issue 2 (1st January 2017)

• Record Type: Journal Article
• Authors: Möller, C.; Zhang, F.; Fuchs, C.; Berger, C.; Rehn, A.; Ruiz Perez, A.; Rahimi‐Iman, A.; Hader, J.; Koch, M.; Moloney, J.V.; Koch, S.W.; Stolz, W.
• Is Part Of: Electronics letters. Volume 53:Issue 2(2017)
• Page Start: 93
• Page End: 94
• Publication Date: 2017-01-01
• Subjects: gallium compounds -- indium compounds -- arsenic compounds -- III‐V semiconductors -- quantum well lasers -- laser cavity resonators -- laser modes -- laser beams -- Q‐factor; fundamental transverse mode operation -- type‐II vertical‐external‐cavity surface‐emitting laser -- type‐II quantum wells -- TEM00 mode -- beam quality -- optimisation -- M2 factors -- pump powers -- wavelength 1175 nm -- power 350 mW -- GaInAs‐GaAsSb‐GaInAs; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2016.3732
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The modal properties of a novel vertical‐external‐cavity surface‐emitting laser with (GaIn)As/Ga(AsSb)/(GaIn)As type‐II quantum wells are analysed. The device, emitting at a wavelength around 1175 nm, is operated in TEM00 mode and optimised for a high beam quality. The M 2 factors are measured at various pump powers. An excellent beam quality is observed for up to 350 mW with an M 2 < 1.2.