High sensitivity AlGaN/GaN lateral field‐effect rectifier for zero‐bias microwave detection. Issue 22 (1st October 2013)

• Record Type: Journal Article
• Authors: Zhou, Q.; Chen, W.; Zhou, C.; Zhang, B.; Chen, K.J.
• Is Part Of: Electronics letters. Volume 49:Issue 22(2013)
• Page Start: 1391
• Page End: 1393
• Publication Date: 2013-10-01
• Subjects: aluminium compounds -- gallium compounds -- HEMT integrated circuits -- III‐V semiconductors -- rectifiers -- wide band gap semiconductors; AlGaN‐GaN -- frequency 2 GHz -- time 200 s -- power 120 W -- zero‐bias square‐law detector applications -- direct‐measured voltage sensitivity -- zero‐biased curvature coefficient -- ion plasma treatment -- HEMT circuitry -- high electron mobility transistors -- L‐FER -- zero‐bias microwave detection -- lateral field‐effect rectifier; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.2506
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : High sensitivity AlGaN/GaN lateral field‐effect rectifiers (L‐FERs) were realised that can be monolithically integrated with AlGaN/GaN high electron mobility transistors (HEMTs) circuitry. F − ion plasma treatment was optimised to achieve strong nonlinearity of the L‐FER at zero‐bias. The L‐FER treated by F − ion plasma at 120 W for 200 s exhibits a record level zero‐biased curvature coefficient, γ, of 69 V −1 at room temperature. The direct‐measured voltage sensitivity is as high as 6.75 mV/μW at 2 GHz. The high sensitivity and AlGaN/GaN HEMTs compatibility of the L‐FER make them very promising for zero‐bias square‐law detector applications.