Cite
HARVARD Citation
Fu, X. et al. (2018). High‐frequency InAlN/GaN HFET with fmax over 400 GHz. Electronics letters. 54 (12), pp. 783-785. [Online].
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Fu, X. et al. (2018). High‐frequency InAlN/GaN HFET with fmax over 400 GHz. Electronics letters. 54 (12), pp. 783-785. [Online].