Monolithically integrated dual‐lock‐in optical sensor. Issue 4 (1st February 2014)

• Record Type: Journal Article
• Authors: Davidovic, M.; Seiter, J.; Hofbauer, M.; Gaberl, W.; Zimmermann, H.
• Is Part Of: Electronics letters. Volume 50:Issue 4(2014)
• Page Start: 306
• Page End: 308
• Publication Date: 2014-02-01
• Subjects: cathodes -- CMOS analogue integrated circuits -- feedback amplifiers -- frequency modulation -- integrated circuit design -- integrated circuit manufacture -- integrated circuit technology -- laser feedback -- monolithic integrated circuits -- optical sensors -- p‐i‐n photodiodes -- photodetectors -- radiofrequency amplifiers -- radiofrequency integrated circuits -- signal detection; frequency 10 MHz -- size 850 nm -- size 0.35 mum -- interleaved PIN photodiode -- optical signal detection -- frequency detection -- FSF laser -- frequency shifted feedback laser -- CMOS process -- innovative dual‐cathode photodetector -- dual‐lock‐in amplifier -- single‐pixel sensor -- monolithically integrated dual‐lock‐in optical sensor; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.3575
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A single‐pixel sensor consisting of a dual‐lock‐in amplifier with an innovative dual‐cathode photodetector is presented. The sensor is fabricated in 0.35 µm CMOS and is designed to be integrated in a multipixel array working with a frequency shifted feedback (FSF) laser. The realised single‐pixel structure occupies an area of 120 × 100 µm² at a 58% fill factor. This pixel ensures frequency detection of the optical signal independently of its phase and power. The bandwidth of the interleaved pin photodiodes is larger than 100 MHz even for 850 nm. The sensor shows a dynamic range of ∼24 dB at a modulation frequency of 10 MHz. Signals up to 35 MHz can be detected.