Cite
HARVARD Citation
Kaun, S. et al. (2013). Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free‐standing GaN. Electronics letters. 49 (14), pp. 893-895. [Online].
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Kaun, S. et al. (2013). Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free‐standing GaN. Electronics letters. 49 (14), pp. 893-895. [Online].