Cite
HARVARD Citation
Xu, Z. et al. (2020). 200°C/5 MHz GaN‐based gate driver circuits with 1 nF/4.7 Ω RC load for high‐temperature high‐frequency all‐GaN IC applications. Electronics letters. 56 (22), pp. 1200-1202. [Online].
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Xu, Z. et al. (2020). 200°C/5 MHz GaN‐based gate driver circuits with 1 nF/4.7 Ω RC load for high‐temperature high‐frequency all‐GaN IC applications. Electronics letters. 56 (22), pp. 1200-1202. [Online].