Design of magnetic tunnel junction‐based tunable spin torque oscillator at nanoscale regime. Issue 2 (1st March 2016)

• Record Type: Journal Article
• Authors: Dwivedi, Amit Krishna; Islam, Aminul
• Is Part Of: IET circuits, devices & systems. Volume 10:Issue 2(2016)
• Page Start: 121
• Page End: 129
• Publication Date: 2016-03-01
• Subjects: radiofrequency oscillators -- radiofrequency amplifiers -- impedance matching -- magnetoelectronics -- magnetic tunnelling; magnetic tunnel junction-spin torque oscillator -- spintronic -- compact tunable nanosized RF oscillator -- DC bias current -- MTJ-STO -- multistage amplifier -- impedance matching -- mutual phase locking mechanism -- spectrum linewidth -- CMOS technology -- Verilog-A -- HSPICE -- complementary metal oxide semiconductor; Electronic circuits -- Periodicals; Electronic systems -- Periodicals; 621.381505
• DOI: 10.1049/iet-cds.2015.0104
• Languages: English
• ISSNs: 1751-858X

Abstract

Abstract : This study proposes a spintronic based compact tunable nano‐sized RF oscillator. The proposed design provides parametric performance improvement as compared with the designs already reported in literature. This design also offers higher operating frequency up to range of several GHz, which can be tuned by a DC bias current. The proposed magnetic tunnel junction‐spin torque oscillators (MTJ‐STO) model overcomes the limitation of low output power which is prime issue in spin torque oscillators (STOs). This is achieved by employing multi‐stage amplifier with impedance matching stages. In addition to that, mutual phase locking mechanism of STOs is introduced to act as a remedy for broadening of the spectrum linewidth, which is a critical issue in traditional oscillators. The hybrid model presented in this study contains spin torque based MTJ, which is compatible with CMOS technology. The modelling of proposed circuit has been done in Verilog‐A and simulation results have been verified using HSPICE.