High‐performance dual‐layer channel ITO/TZO TFTs fabricated on glass substrate. Issue 8 (1st April 2014)

• Record Type: Journal Article
• Authors: Chen, Zhuofa; Han, Dedong; Zhao, Nannan; Cong, Yingying; Wu, Jing; Dong, Junchen; Zhao, Feilong; Liu, Lifeng; Zhang, Shengdong; Zhang, Xing; Wang, Yi
• Is Part Of: Electronics letters. Volume 50:Issue 8(2014)
• Page Start: 633
• Page End: 635
• Publication Date: 2014-04-01
• Subjects: indium compounds -- tin compounds -- thin film transistors -- amorphous semiconductors -- zinc compounds -- substrates; high‐performance bottom‐gate type dual‐layer channel TFT -- fully transparent dual‐layer channel ITO‐TZO TFT -- ITO‐TZO thin‐film transistors -- glass substrate -- single channel TZO TFT -- ITO TFT -- saturation mobility -- linear mobility -- subthreshold swing -- threshold voltage -- device performance -- voltage 3.16 V -- ITO; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.0344
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : High‐performance fully transparent bottom‐gate type dual‐layer (ITO/TZO) channel thin‐film transistors (ITO/TZO TFTs) have been successfully fabricated on a glass substrate at low temperature (below 100°C). The results show that dual‐layer channel (ITO/TZO) TFTs, compared to the single channel TZO TFTs and ITO TFTs, exhibit better electrical properties, with a low I off of 1.5 × 10 −11 A, a high on/off ratio of 5.78 × 10 7, a high saturation mobility μ s of 292 cm 2 /V·s, a high linear mobility μ l of 105.4 cm 2 /V·s, a steep subthreshold swing of 0.33 V/decade and a threshold voltage V th of 3.16 V. The results show that excellent device performance can be realised in ITO/TZO TFTs.