Performance analysis of mixed CNT bundle interconnects at 10 nm technology. Issue 7 (26th October 2020)

• Record Type: Journal Article
• Authors: Kumbhare, Vijay Rao; Paltani, Punya Prasanna; Majumder, Manoj Kumar
• Is Part Of: IET circuits, devices & systems. Volume 14:Issue 7(2020)
• Page Start: 1049
• Page End: 1057
• Publication Date: 2020-10-26
• Subjects: carbon nanotube field effect transistors -- semiconductor device metallisation -- semiconductor device models -- nanoelectronics; mixed CNT bundle interconnects -- cross‐coupling crosstalk -- coupled interconnects -- interconnect problems -- driver‐interconnect‐load setup -- unique multiconductor transmission line -- equivalent single conductor model -- CNT diameters -- coupling parasitics -- single line delay -- cross‐coupling delay -- densely packed bundle -- interconnect lengths -- cross‐coupling impact -- on‐chip interconnects -- performance analysis -- randomly distributed mixed CNT bundle -- spatially arranged mixed carbon nanotube bundle -- CNT field‐effect transistor -- CNTFET driver model -- power dissipation -- CNTFET‐based realistic RMCB -- SMCB configurations -- next‐generation on‐chip applications -- size 10.0 nm -- size 700.0 mum -- C; Electronic circuits -- Periodicals; Electronic systems -- Periodicals; 621.381505
• DOI: 10.1049/iet-cds.2019.0516
• Languages: English
• ISSNs: 1751-858X

Abstract

Abstract : In recent past, the cross‐coupling crosstalk becomes a dominating factor due to the closer proximity of wire that reduces the performance of coupled interconnects at lower technology. To overwhelm interconnect problems, this work demonstrates a comprehensive study of unshielded and active shielded spatially arranged mixed carbon nanotube (CNT) bundle (SMCB) and randomly distributed mixed CNT bundle (RMCB) interconnects at 10 nm technology. Using a driver‐interconnect‐load setup, a unique multi‐conductor transmission line and an equivalent single conductor model is proposed considering the impact of different CNT diameters with their associated line and coupling parasitics. A resistive and CNT field‐effect transistor (CNTFET) driver model is considered at 10 nm technology to demonstrate the impact of single line delay, cross‐coupling delay, and power dissipation for the densely packed bundle at global lengths. It is observed that a CNTFET‐based realistic RMCB exhibits on an average 29.19 and 39.56% reduced single line delay and power dissipation, respectively compared to different SMCB configurations at 700 µm interconnect lengths. Moreover, a shielded RMCB encouragingly provides an improved immunity of cross‐coupling impact for the on‐chip interconnects at 10 nm technology. Therefore, from fabrication and modelling aspects, a randomly distributed MCB can be proved as emerging interconnect for next‐generation on‐chip applications.