Laterally‐coupled distributed feedback laser with first‐order gratings by interference lithography. Issue 12 (1st June 2013)

• Record Type: Journal Article
• Authors: Li, Jingsi; Cheng, Julian
• Is Part Of: Electronics letters. Volume 49:Issue 12(2013)
• Page Start: 764
• Page End: 766
• Publication Date: 2013-06-01
• Subjects: aluminium compounds -- current density -- diffraction gratings -- distributed feedback lasers -- etching -- gallium arsenide -- III‐V semiconductors -- indium compounds -- laser beams -- laser cavity resonators -- laser modes -- light interference -- masks -- optical fabrication -- photolithography -- quantum well lasers -- ridge waveguides -- semiconductor epitaxial layers -- waveguide lasers; InP‐AlGaInAs -- size 300 nm -- size 2.6 mum -- size 650 mum -- depth 2 mum -- temperature 293 K to 298 K -- uncoated facets -- slope efficiency -- threshold current density -- sidemode suppression ratio -- single longitudinal mode continuous‐wave operation -- cavity length -- DFB ridge‐waveguide lasers -- self‐aligned process -- deep ridge‐waveguide structure -- laser epiwafer -- planar top surface -- dielectric mask -- etching -- optical interference lithography -- first‐order sidewall gratings -- laterally‐coupled distributed feedback laser; aluminium compounds -- current density -- diffraction gratings -- distributed feedback lasers -- etching -- gallium arsenide -- III‐V semiconductors -- indium compounds -- laser beams -- laser cavity resonators -- laser modes -- light interference -- masks -- optical fabrication -- photolithography -- quantum well lasers -- ridge waveguides -- semiconductor epitaxial layers -- waveguide lasers; InP‐AlGaInAs -- size 300 nm -- size 2.6 mum -- size 650 mum -- depth 2 mum -- temperature 293 K to 298 K -- uncoated facets -- slope efficiency -- threshold current density -- sidemode suppression ratio -- single longitudinal mode continuous‐wave operation -- cavity length -- DFB ridge‐waveguide lasers -- self‐aligned process -- deep ridge‐waveguide structure -- laser epiwafer -- planar top surface -- dielectric mask -- etching -- optical interference lithography -- first‐order sidewall gratings -- laterally‐coupled distributed feedback laser; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.1520
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The first laterally‐coupled distributed feedback (DFB) laser with first‐order sidewall gratings fabricated by optical interference lithography is experimentally demonstrated. The gratings were first etched into a dielectric mask on the planar top surface of an InP/AlGaInAs laser epiwafer, and then transferred to both sidewalls of a 2 µm deep ridge‐waveguide structure using a novel self‐aligned process. DFB ridge‐waveguide lasers with a cavity length of 650 µm and width of 2.6 µm (with 300 nm gratings on both sidewalls) achieved single longitudinal mode continuous‐wave operation, with a sidemode suppression ratio of 37 dB. The threshold current density is 1.7 kA/cm 2 at room temperature, and the slope efficiency is 0.14 mW/mA per facet (uncoated).