Dielectric relaxation in glassy Se90Cd6In4. Issue 18 (1st September 2016)

• Record Type: Journal Article
• Authors: Shukla, N.; Mehta, N.; Dwivedi, D.K.
• Is Part Of: Electronics letters. Volume 52:Issue 18(2016)
• Page Start: 1548
• Page End: 1550
• Publication Date: 2016-09-01
• Subjects: chalcogenide glasses -- dielectric relaxation -- dielectric losses -- melting -- permittivity -- selenium alloys -- cadmium alloys -- indium alloys -- materials preparation; dielectric relaxation -- temperature dependence -- glassy alloy -- melt quench technique -- dielectric constant -- dielectric loss factor -- barrier height -- Elliott theory -- charge carriers -- charge defect states -- chalcogenide glasses -- temperature 308 K to 333 K -- Se90Cd6In4; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2016.1798
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : In the present Letter frequency (5 × 10 2 Hz–1 × 10 5 Hz) and temperature (308–333 K) dependence of dielectric parameter of Se90 Cd6 In4 glassy alloy has been examined. Conventional melt quench technique has been applied to prepare Se90 Cd6 In4 glassy alloy. It is observed that dielectric constant ( ε ′) and dielectric loss factor ( ε ″) change with frequency and temperature. The dielectric loss data has been utilised to determine the barrier height W m, which is in accordance with the Elliott's theory of hoping of charge carriers over potential barrier between charge defect states in case of chalcogenide glasses.