High thermal stability and low power dissipation PCM with nanoscale oxygen‐doped SS thin film. Issue 8 (3rd September 2018)

• Record Type: Journal Article
• Authors: You, Haipeng; Hu, Yifeng; Lai, Tianshu; Chou, Qingqian; Zhu, Xiaoqin; Zou, Hua
• Is Part Of: IET nanobiotechnology. Volume 12:Issue 8(2018)
• Page Start: 1080
• Page End: 1083
• Publication Date: 2018-09-03
• Subjects: sputter deposition -- antimony compounds -- X‐ray diffraction -- phase change memories -- thin films -- surface roughness -- doping -- electrical conductivity -- amorphisation -- crystallisation -- thermal stability -- amorphous state -- crystal structure -- nanostructured materials -- nanofabrication -- oxygen; oxygen doping -- low power dissipation -- high thermal stability -- phase‐change memory -- magnetron sputtering -- nanoscale oxygen‐doped Sn15Sb85 thin film -- electrical conductivity -- crystallisation -- crystalline state -- amorphous state -- root‐mean‐square surface roughness -- amorphisation process -- X‐ray diffractometry -- crystalline structure -- Sn15 Sb85; Biotechnology -- Periodicals; Nanotechnology -- Periodicals; 660.6
• DOI: 10.1049/iet-nbt.2018.5120
• Languages: English
• ISSNs: 1751-8741

Abstract

Abstract : To improve thermal stability and reduce power dissipation of phase‐change memory (PCM), the oxygen‐doped Sn15 Sb85 (SS) thin film is proposed by magnetron sputtering in this study. Comparing to undoped Sn15Sb85(SS), the oxygen‐doped‐SS thin film has superior thermal stability and better data retention. Meanwhile, the electrical conductivity of crystallisation oxygen‐doped‐SS thin film is also lower than that of SS, which means its less power consuming in PCM. The electrical conductivity ratio between amorphous and crystalline states for oxygen‐doped SS reaches up to two orders of magnitude. After oxygen doping, the root‐mean‐square surface roughness from amorphous (0.29 nm) to crystalline (0.46 nm) state for oxygen‐doped‐SS thin films becomes smaller. The switching time of amorphisation process for the oxygen‐doped‐SS thin film (∼2.07 ns) is shorter than Ge2 Sb2 Te5 (GST) (∼3.05 ns). X‐ray diffractometer is recorded to investigate the change of crystalline structure. Thus, the authors infer that oxygen‐doped SS is a promising phase‐change thin film for PCM.