C‐band 60 W GaN power amplifier MMIC designed with harmonic tuned approach. Issue 3 (1st February 2016)

• Record Type: Journal Article
• Authors: Yu, Xuming; Sun, Huan; Xu, Yuehang; Hong, Wei
• Is Part Of: Electronics letters. Volume 52:Issue 3(2016)
• Page Start: 219
• Page End: 221
• Publication Date: 2016-02-01
• Subjects: gallium compounds -- III‐V semiconductors -- wide band gap semiconductors -- MMIC power amplifiers -- integrated circuit design; C‐band gallium nitride power amplifier MMIC -- harmonic tuned approach -- second harmonic tuned circuits -- MMIC design -- optimised second harmonic impedance -- power‐added efficiency -- PAE -- class‐AB gallium nitride HPA MMIC -- drain voltage -- pulse width -- power 60 W -- voltage 28 V -- gain 25 dB -- frequency 5 GHz to 6 GHz -- time 100 mus -- GaN; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.3017
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A C‐band GaN high power amplifier (HPA) microwave monolithic integrated circuit (MMIC) with second harmonic tuned circuits is presented. The MMIC is designed with three stages to ensure high gain, and the final stage is matched with optimised second harmonic impedance to improve the power added efficiency (PAE). Experimental results show that the class AB GaN HPA MMIC, with drain voltage of 28 V, can be realised with more than 40% PAE and 60 W output power, with associated gain of 25 dB, in 5–6 GHz at 100 μs pulse width and 10% duty cycle. The chip area is 3.2 × 5.3 mm (16.96 mm).