75 nm T‐shaped gate for In0.17Al0.83N/GaN HEMTs with minimal short‐channel effect. Issue 24 (1st November 2013)

• Record Type: Journal Article
• Authors: Geum, D.M.; Shin, S.H.; Kim, M.S.; Jang, J.H.
• Is Part Of: Electronics letters. Volume 49:Issue 24(2013)
• Page Start: 1536
• Page End: 1537
• Publication Date: 2013-11-01
• Subjects: aluminium compounds -- gallium compounds -- high electron mobility transistors -- III‐V semiconductors -- indium compounds -- Schottky barriers -- wide band gap semiconductors; In0.17Al0.83N‐GaN -- size 6 nm -- frequency 170 GHz to 210 GHz -- size 75 nm -- maximum oscillation frequency -- unity current gain cut‐off frequency -- high‐frequency characteristics -- drain‐induced barrier lowering -- output resistance -- Schottky layer -- barrier layer -- lattice‐matched high electron‐mobility transistors -- minimal short‐channel effect -- HEMT -- T‐shaped gate; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.2769
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Lattice‐matched InAlN/gallium nitride high electron‐mobility transistors with a 6 nm‐thick InAlN barrier layer were fabricated and characterised. By introducing a very thin InAlN Schottky layer, the short‐channel effect could be minimised. The devices with a gate length of 75 nm exhibited output resistance as high as 56.9 Ω mm together with a drain‐induced barrier lowering as low as 63 mV/V. The devices also demonstrated excellent high‐frequency characteristics such as a unity current gain cutoff frequency ( fT ) of 170 GHz and a maximum oscillation frequency ( f max ) of 210 GHz.