Kink effect in TiO2 embedded ZnO quantum dot‐based thin film transistors. Issue 4 (1st February 2017)

• Record Type: Journal Article
• Authors: Kumar, H.; Kumar, Y.; Singh, K.; Kumar, S.; Rawat, G.; Kumar, C.; Pal, B.N.; Jit, S.
• Is Part Of: Electronics letters. Volume 53:Issue 4(2017)
• Page Start: 262
• Page End: 264
• Publication Date: 2017-02-01
• Subjects: thin film transistors -- semiconductor quantum dots -- electron beam effects -- sol‐gel processing -- zinc compounds -- aluminium compounds -- titanium compounds; quantum dot‐based thin film transistors -- kink effect -- electrical characteristics -- back‐gated thin film transistor -- p‐Si substrate -- electron beam evaporation -- A‐T‐A structure -- sol‐gel method -- charge transportation -- drain electrodes -- source electrodes -- charge trapping -- QD layer -- Al2O3‐TiO2‐Al2O3‐ZnO; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2016.3595
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The kink effect at a very low voltage (∼1.15 V) region is reported in the electrical characteristics of a back‐gated thin film transistor fabricated by embedding a TiO2 (T) layer between two Al2 O3 (A) layers grown on a p‐Si substrate using electron beam evaporation. A layer of ZnO quantum dots (QDs) deposited on the A–T–A structure by the sol–gel method is used for charge transportation between the source and drain electrodes grown on the ZnO QDs layer. The effect of TiO2 is analysed for the charge trapping and possible occurrence of the kink effect.