High‐speed graded‐channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz. Issue 13 (1st June 2020)

• Record Type: Journal Article
• Authors: Moon, J.S.; Grabar, R.; Wong, J.; Antcliffe, M.; Chen, P.; Arkun, E.; Khalaf, I.; Corrion, A.; Chappell, J.; Venkatesan, N.; Fay, P.
• Is Part Of: Electronics letters. Volume 56:Issue 13(2020)
• Page Start: 678
• Page End: 680
• Publication Date: 2020-06-01
• Subjects: power measurement -- aluminium compounds -- wide band gap semiconductors -- gallium compounds -- high electron mobility transistors -- III‐V semiconductors -- microwave field effect transistors -- millimetre wave field effect transistors -- semiconductor device measurement; power added efficiency -- PAE -- two‐tone power measurement -- novel channel design -- high‐speed graded‐channel HEMTs -- high electron mobility transistors -- high‐efficiency millimetre‐wave power amplifiers -- RF power density operation -- size 60.0 nm -- voltage 10.0 V -- frequency 30.0 GHz -- voltage 14.0 V -- efficiency 75 percent -- efficiency 65 percent -- AlGaN‐GaN; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2020.0281
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The authors report on highly scaled 60 nm gate length graded‐channel AlGaN/GaN high electron mobility transistors (HEMTs) with a record power added efficiency (PAE) of 75% at 2.1 W/mm power density at Vdd = 10 V and the PAE of 65% at 3.0 W/mm power density at 30 GHz at Vdd = 14 V. Under two‐tone power measurement, the graded‐channel AlGaN/GaN HEMTs demonstrated similar power performance with peak PAE >70% at 30 GHz. This novel channel design shows great promise for high‐efficiency millimetre‐wave (mmW) power amplifiers up to 3 W/mm RF power density operation.