GaSb‐based heterostructure with buried vacuum pocket photonic crystal layer. Issue 8 (1st April 2020)

• Record Type: Journal Article
• Authors: Liu, R.; Shterengas, L.; Stein, A.; Kipshidze, G.; Jiang, J.; Hosoda, T.; Belenky, G.
• Is Part Of: Electronics letters. Volume 56:Issue 8(2020)
• Page Start: 388
• Page End: 390
• Publication Date: 2020-04-01
• Subjects: laser modes -- semiconductor heterojunctions -- gallium compounds -- III‐V semiconductors -- electroluminescence -- photonic crystals -- molecular beam epitaxial growth -- gallium arsenide -- quantum well lasers -- semiconductor growth -- photonic band gap; GaSb‐based heterostructure -- buried vacuum pocket photonic crystal layer -- molecular beam epitaxial regrowth -- nanopatterned GaSb surface -- photonic dispersion -- angle‐resolved electroluminescence experiment -- well‐resolved bands -- photonic crystal band‐edge states -- high contrast 2D photonic crystal layer -- square lattice -- single‐mode lasing -- emitting laser heterostructure -- quantum well gain peak -- wavelength 2.0 mum -- GaSb -- GaSb; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2019.3710
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The vacuum pocket retaining molecular beam epitaxial regrowth of the nano‐patterned GaSb surface was demonstrated. The high contrast 2D photonic crystal layer was incorporated into the test 2 µm emitting laser heterostructure. The photonic dispersion determined from angle‐resolved electroluminescence experiment showed four well‐resolved bands corresponding to the model predictions for the square lattice. The single‐mode lasing near 2 µm has been observed at the temperature corresponding to the alignment of the photonic crystal band‐edge states and the quantum well gain peak. The reference devices without the photonic crystal layer emitted trivial spectra and did not lase at any temperature.