Room temperature continuous wave operation of InAs/AlSb‐based quantum cascade laser at λ ∼11 µm. Issue 17 (1st August 2018)

• Record Type: Journal Article
• Authors: Loghmari, Z.; Bahriz, M.; Thomas, D. Díaz; Meguekam, A.; Van, H. Nguyen; Teissier, R.; Baranov, A.N.
• Is Part Of: Electronics letters. Volume 54:Issue 17(2018)
• Page Start: 1045
• Page End: 1047
• Publication Date: 2018-08-01
• Subjects: III‐V semiconductors -- aluminium compounds -- optical fabrication -- distributed feedback lasers -- indium compounds -- quantum cascade lasers -- current density -- laser cavity resonators; temperature 300.0 K -- temperature 293 K to 298 K -- InAs‐AlSb -- room temperature continuous wave operation -- continuous wave regime -- InAs‐based QCLs -- distributed feedback lasers -- cw regime -- pulsed threshold current density -- InAs‐AlSb‐based quantum cascade laser -- cleaved Fabry‐Perot resonators -- single frequency emission; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2018.5258
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The InAs/AlSb quantum cascade lasers (QCLs) operating ∼11 µm in the continuous wave (cw) regime at room temperature are reported. The lasers with cleaved Fabry–Perot resonators demonstrated pulsed threshold current densities below 1 kA/cm 2 at 300 K and operated in a cw up to 320 K that is the maximum temperature of such regime of operation for InAs‐based QCLs. Distributed feedback lasers fabricated from the same wafer exhibited single frequency emission near 11 µm and operated in the cw regime up to 295 K.